Liu Pan, Lin Xiaoyang, Xu Yong, Zhang Boyu, Si Zhizhong, Cao Kaihua, Wei Jiaqi, Zhao Weisheng
Fert Beijing Research Institute, School of Electrical and Information Engineering, Big Data and Brain Computing Center (BDBC), Beihang University, Beijing 100191, China.
Beihang-Geortek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China.
Materials (Basel). 2017 Dec 28;11(1):47. doi: 10.3390/ma11010047.
The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.
夹心结构中的磁电阻效应描述了一种器件的显著磁电阻效应，该器件具有由非磁性层隔开的两个铁磁层的堆叠结构（即夹心结构）。在过去几十年中，这种效应的发展引发了存储应用的革命。在本综述中，我们重新审视了具有非磁性金属、半导体或有机薄膜间隔层的磁性夹心结构中的磁电阻效应和层间交换耦合（IEC）效应。然后，我们讨论了通过不同方法对这种效应的光学调制。最后，我们讨论了这些效应的各种应用，并基于这种可调磁电阻效应提出了实现超低功耗、高速数据写入和芯片间连接的前景。
