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有机半导体薄膜生长过程中光学光谱的实时变化及其厚度范围。

Real-time changes in the optical spectrum of organic semiconducting films and their thickness regimes during growth.

机构信息

Institut für Angewandte Physik, Uni Tübingen, 72076 Tübingen, Germany.

出版信息

Phys Rev Lett. 2010 Jun 25;104(25):257401. doi: 10.1103/PhysRevLett.104.257401. Epub 2010 Jun 24.

DOI:10.1103/PhysRevLett.104.257401
PMID:20867413
Abstract

We present real-time in situ studies of optical spectra during thin film growth of several prototype organic semiconductors (pentacene, perfluoropentacene, and diindenoperylene) on SiO2. These data provide insight into surface and interface effects that are of fundamental importance and of relevance for applications in organic electronics. With respect to the bulk, the different molecular environment and structural changes within the first few monolayers can give rise to significant optical changes. Similar to interface-driven phenomena in, e.g., magnetism, spectral changes as a function of thickness d are a very general effect, decaying as 1/d in the simplest approximation. We observe energy shifts of 50-100 meV, rather small changes of the exciton-phonon coupling, and new transitions in specific systems, which should be considered as general features of the growth of organics.

摘要

我们在 SiO2 上进行了几种原型有机半导体(并五苯、全氟并五苯和二茚并对二烯)薄膜生长过程中的实时原位光谱研究。这些数据提供了对表面和界面效应的深入了解,这些效应对于有机电子学的应用具有重要意义。与体相相比,在最初的几个单层内,不同的分子环境和结构变化可能导致显著的光学变化。类似于磁学等界面驱动现象,厚度 d 作为函数的光谱变化是一种非常普遍的效应,在最简单的近似下按 1/d 衰减。我们观察到 50-100 meV 的能量位移,激子-声子耦合的较小变化,以及特定系统中的新跃迁,这些都应被视为有机物生长的一般特征。

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Phys Rev Lett. 2010 Jun 25;104(25):257401. doi: 10.1103/PhysRevLett.104.257401. Epub 2010 Jun 24.
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