在铁电记录介质中实现了记录密度为4太比特每平方英寸的实际信息存储。
Actual information storage with a recording density of 4 Tbit∕in. in a ferroelectric recording medium.
作者信息
Tanaka Kenkou, Cho Yasuo
机构信息
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira Aoba-ku, Sendai 980-8577, Japan.
出版信息
Appl Phys Lett. 2010 Aug 30;97(9). doi: 10.1063/1.3463470.
A new method to achieve real information recording with a density above 1 Tbit∕in.(2) in ferroelectric data storage systems is proposed. In this system, data bits were written in the form of the polarization direction, and the data were read by scanning nonlinear dielectric microscopy technique. The domain-switching characteristics of the virgin and inversely prepolarized media were compared, and the conditions of the pulse voltage for writing were optimized. As a result, actual data containing 64×64 bits were recorded at an areal density of 4 Tbit∕in.(2). The bit error rate was evaluated to be 1.2×10(-2).
提出了一种在铁电数据存储系统中实现密度高于1 Tbit∕in²的真实信息记录的新方法。在该系统中，数据位以极化方向的形式写入，数据通过扫描非线性介电显微镜技术读取。比较了原始和反向预极化介质的畴切换特性，并优化了写入脉冲电压的条件。结果，以4 Tbit∕in²的面密度记录了包含64×64位的实际数据。评估得出误码率为1.2×10⁻²。
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