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夹心复合结构中由铁磁形状记忆 Ni-Mn-Ga 晶体和压电 PVDF 聚合物引起的磁场诱导应变和磁电效应。

Magnetic field-induced strain and magnetoelectric effects in sandwich composite of ferromagnetic shape memory Ni-Mn-Ga crystal and piezoelectric PVDF polymer.

机构信息

Department of Electrical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong.

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2010 Oct;57(10):2147-53. doi: 10.1109/TUFFC.2010.1671.

Abstract

A sandwich composite consisting of one layer of ferromagnetic shape memory Ni-Mn-Ga crystal plate bonded between two layers of piezoelectric PVDF polymer film was fabricated, and its magnetic field-induced strain (MFIS) and magnetoelectric (ME) effects were investigated, together with a monolithic Ni-Mn-Ga crystal, as functions of magnetic fields and mechanical load. The load-free dc- and ac-MFISs were 0.35 and 0.05% in the composite, and 5.6 and 0.3% in the monolithic crystal, respectively. The relatively smaller load-free MFISs in the composite than the monolithic crystal resulted from the clamping of martensitic twin-boundary motion in the Ni-Mn-Ga plate by the PVDF films. The largest ME coefficient (α(E)) was 0.58 V/cm·Oe at a magnetic bias field (H(Bias)) of 8.35 kOe under load-free condition. The mechanism of the ME effect originated from the mechanically mediated MFIS effect in the Ni-Mn-Ga plate and piezoelectric effect in the PVDF films. The measured α(E)-H(Bias) responses under different loads showed good agreement with the model prediction.

摘要

制备了由一层铁磁形状记忆 Ni-Mn-Ga 晶体板夹在两层压电 PVDF 聚合物薄膜之间的夹层复合材料,并研究了其磁场诱导应变 (MFIS) 和磁电 (ME) 效应,以及整体 Ni-Mn-Ga 晶体作为磁场和机械载荷的函数。复合材料的无负载直流和交流 MFIS 分别为 0.35%和 0.05%,整体晶体的分别为 5.6%和 0.3%。复合材料中的无负载 MFIS 比整体晶体小,这是由于 PVDF 薄膜对 Ni-Mn-Ga 板中马氏体孪晶界运动的夹紧所致。在无负载条件下,在磁场偏置 (H(Bias))为 8.35 kOe 时,最大 ME 系数 (α(E))为 0.58 V/cm·Oe。ME 效应的机制源于 Ni-Mn-Ga 板中的机械介导 MFIS 效应和 PVDF 薄膜中的压电效应。在不同负载下测量的 α(E)-H(Bias)响应与模型预测吻合良好。

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