Photonics and Nano-Engineering Laboratory, Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA.
Opt Lett. 2010 Oct 1;35(19):3228-30. doi: 10.1364/OL.35.003228.
We demonstrate low-loss chalcogenide (As(2)S(3)) waveguides on a LiNbO(3) substrate for the mid-IR wavelength (4.8 μm). Designed for single-mode propagation, they are fabricated through photolithography and dry-etching technology and characterized on a mid-IR measurement setup with a quantum cascade laser. For straight waveguides, propagation loss as low as 0.33 dB/cm is measured and low-loss bends on the order of 100 μm are simulated, with measurement results showing <3 dB for a 250 μm bend radius. The coupling efficiency is estimated to be 81%. In addition, the influences of variations in width and bend radius are also investigated.
我们在 LiNbO3 衬底上展示了用于中红外波长（4.8μm）的低损耗硫属化物（As2S3）波导。这些波导设计用于单模传播，通过光刻和干法刻蚀技术制造，并在带有量子级联激光器的中红外测量装置上进行了特性测试。对于直波导，测量得到的传播损耗低至 0.33dB/cm，而低损耗的弯曲半径约为 100μm，测量结果显示 250μm 弯曲半径时的损耗小于 3dB。估计耦合效率约为 81%。此外，还研究了宽度和弯曲半径变化的影响。
