Herzog Amir, Hadad Benjamin, Lyubin Victor, Klebanov Matvey, Reiner Avraham, Shamir Avishay, Ishaaya Amiel A
Opt Lett. 2014 Apr 15;39(8):2522-5. doi: 10.1364/OL.39.002522.
We report on the fabrication of arsenic tri-sulfide chalcogenide strip waveguides on a sapphire substrate, suitable for guiding 0.55-5 μm wavelengths. Propagation losses measured using the Fabry-Perot resonator technique are 2.78 dB/cm. The chalcogenide layer refractive index dispersion is evaluated by measuring the transmission as a function of wavelength prior to waveguide fabrication. Numerical simulations are used to compare between silica and sapphire substrates for mid-IR transmittance and to calculate the waveguide's effective refractive index in a suggested design. The use of a low-loss sapphire substrate redefines the mid-IR boundaries of chalcogenide waveguides for linear and nonlinear applications.
我们报道了在蓝宝石衬底上制备三硫化二砷硫系化合物条形波导的情况，该波导适用于引导0.55 - 5μm波长的光。使用法布里 - 珀罗谐振器技术测得的传播损耗为2.78 dB/cm。在制备波导之前，通过测量透射率随波长的变化来评估硫系化合物层的折射率色散。数值模拟用于比较二氧化硅和蓝宝石衬底的中红外透过率，并在建议设计中计算波导的有效折射率。使用低损耗蓝宝石衬底重新定义了用于线性和非线性应用的硫系化合物波导的中红外边界。
