Li Guoliang, Zheng Xuezhe, Yao Jin, Thacker Hiren, Shubin Ivan, Luo Ying, Raj Kannan, Cunningham John E, Krishnamoorthy Ashok V
Oracle Labs, Oracle, San Diego, California 92121, USA.
Opt Express. 2011 Oct 10;19(21):20435-43. doi: 10.1364/OE.19.020435.
We report a high-speed ring modulator that fits many of the ideal qualities for optical interconnect in future exascale supercomputers. The device was fabricated in a 130 nm SOI CMOS process, with 7.5 μm ring radius. Its high-speed section, employing PN junction that works at carrier-depletion mode, enables 25 Gb/s modulation and an extinction ratio >5 dB with only 1V peak-to-peak driving. Its thermal tuning section allows the device to work in broad wavelength range, with a tuning efficiency of 0.19 nm/mW. Based on microwave characterization and circuit modeling, the modulation energy is estimated ~7 fJ/bit. The whole device fits in a compact 400 μm2 footprint.
我们报道了一种高速环形调制器，它具备未来百亿亿次超级计算机光互连的许多理想特性。该器件采用130nm SOI CMOS工艺制造，环形半径为7.5μm。其高速部分采用工作在载流子耗尽模式的PN结，仅需1V峰峰值驱动就能实现25Gb/s调制且消光比>5dB。其热调谐部分使器件能在宽波长范围内工作，调谐效率为0.19nm/mW。基于微波特性表征和电路建模，估计调制能量约为7fJ/bit。整个器件占用的紧凑面积仅为400μm²。
