Mas Sara, Caraquitena José, Galán José V, Sanchis Pablo, Martí Javier
Valencia Nanophotonics Technology Center, Universidad Politécnica de Valencia, Camino de Vera s/n, 46022 Valencia, Spain.
Opt Express. 2010 Sep 27;18(20):20839-44. doi: 10.1364/OE.18.020839.
We investigate the chromatic dispersion properties of silicon channel slot waveguides in a broad spectral region centered at ~1.5 μm. The variation of the dispersion profile as a function of the slot fill factor, i.e., the ratio between the slot and waveguide widths, is analyzed. Symmetric as well as asymmetric geometries are considered. In general, two different dispersion regimes are identified. Furthermore, our analysis shows that the zero and/or the peak dispersion wavelengths can be tailored by a careful control of the geometrical waveguide parameters including the cross-sectional area, the slot fill factor, and the slot asymmetry degree.
我们研究了以~1.5μm为中心的宽光谱区域内硅沟道狭缝波导的色散特性。分析了色散分布随狭缝填充因子（即狭缝与波导宽度之比）的变化情况。考虑了对称和非对称几何结构。一般来说，识别出了两种不同的色散区域。此外，我们的分析表明，通过仔细控制包括横截面积、狭缝填充因子和狭缝不对称度在内的几何波导参数，可以调整零色散波长和/或峰值色散波长。
