Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904-4745, USA.
Microsc Microanal. 2010 Dec;16(6):831-41. doi: 10.1017/S1431927610093992. Epub 2010 Oct 25.
A simple algorithm is developed and implemented to eliminate ambiguities, in both statistical analyses of orientation data (e.g., orientation averaging) and electron backscattered diffraction (EBSD) orientation map visualization, caused by symmetrically equivalent orientations and the wrap-around or umklapp effect. Using crystal symmetry operators and the lowest Euclidian-distance criterion, the orientation of each pixel within a grain is redefined. An advantage of this approach is demonstrated for direct determination of the representative orientation of a grain within an EBSD map by mean, median, or quaternion-based averaging methods that can be further used within analyses or visualization of misorientation or geometrically necessary dislocation (GND) density. If one also considers the lattice curvature tensor, five components of the dislocation density tensor-corresponding to a part of the GND content-may be inferred. The methodology developed is illustrated using EBSD orientation data obtained from the fatigue crack-tips/wakes in aerospace aluminum alloys 2024-T351 and 7050-T7451.
开发并实现了一种简单的算法,以消除由对称等效取向和环绕或 umklapp 效应引起的取向数据(例如,取向平均)和电子背散射衍射(EBSD)取向图可视化中的歧义。使用晶体对称运算符和最低欧几里得距离准则,重新定义了每个晶粒内像素的取向。通过基于均值、中位数或四元数的平均方法,可以直接确定 EBSD 图中晶粒的代表性取向,这种方法的优势在分析或可视化偏置或几何必要位错(GND)密度时得到了证明。如果还考虑晶格曲率张量,则可以推断出位错密度张量的五个分量-对应于 GND 含量的一部分。所开发的方法学使用从航空航天铝合金 2024-T351 和 7050-T7451 的疲劳裂纹尖端/尾迹获得的 EBSD 取向数据进行了说明。