Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, USA.
Small. 2010 Dec 6;6(23):2748-54. doi: 10.1002/smll.201001324.
A method is reported to pattern monolayer graphene nanoconstriction field-effect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedback-controlled electromigration (FCE) to form a constriction in a gold etch mask that is first patterned using conventional lithographic techniques. The use of FCE allows the etch mask to be patterned on size scales below the limit of conventional nanolithography. The opening of a confinement-induced energy gap is observed as the NCFET width is reduced, as evidenced by a sharp increase in the NCFET on/off ratio. The on/off ratios obtained with this procedure can be larger than 1000 at room temperature for the narrowest devices; this is the first report of such large room-temperature on/off ratios for patterned graphene FETs.
报道了一种将临界尺寸低于 10nm 的单层石墨烯纳米限制场效应晶体管（NCFET）进行图案化的方法。通过使用反馈控制电迁移（FCE）在金刻蚀掩模中形成限制，从而实现了 NCFET 的制造，该掩模首先使用传统光刻技术进行图案化。FCE 的使用允许在低于传统纳米光刻极限的尺寸范围内对刻蚀掩模进行图案化。随着 NCFET 宽度的减小，观察到限制诱导的能隙打开，这表现为 NCFET 的导通/关断比急剧增加。对于最窄的器件，通过该方法获得的导通/关断比在室温下可以大于 1000；这是首次报道对于图案化石墨烯 FET，具有如此大的室温导通/关断比。
