Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, Japan.
Nanotechnology. 2010 Nov 26;21(47):475603. doi: 10.1088/0957-4484/21/47/475603. Epub 2010 Oct 29.
ZnO nanowires were synthesized on Si substrates by a simple metal vapor deposition method without any catalysts. The initial growth and the growth mechanism of the ZnO nanowires were studied using scanning and transmission electron microscopy. We found that the ZnO nanowires grew on the Si substrate via a self-seeding vapor-solid mechanism. The growth process of the ZnO nanowires consisted of four steps: self-seeding, one-dimensional epitaxial growth of the nanowires on the seeds by a base-growth mode, further acceleration of nanowire growth with additional seeding, and active formation of the nanowires.
氧化锌纳米线在 Si 衬底上通过一种简单的无催化剂金属气相沉积方法合成。使用扫描和透射电子显微镜研究了 ZnO 纳米线的初始生长和生长机制。我们发现 ZnO 纳米线通过自种晶气-固机制在 Si 衬底上生长。氧化锌纳米线的生长过程包括四个步骤:自种晶、纳米线在种子上以基底生长模式的一维外延生长、通过额外种晶进一步加速纳米线生长、以及纳米线的活性形成。