（GaMn）As/GaAs 异质结构中的纳米级电势涨落：从单个离子到电荷簇和静电量子点。
Nanoscale potential fluctuations in (GaMn)As/GaAs heterostructures: from individual ions to charge clusters and electrostatic quantum dots.
机构信息
COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands.
出版信息
Nano Lett. 2010 Dec 8;10(12):4874-9. doi: 10.1021/nl102739y. Epub 2010 Nov 1.
During growth of the dilute p-type ferromagnetic semiconductor Ga1-xMnxAs, interstitial manganese, Mni(2+), is formed when x exceeds 2%. The double donor Mni(2+) compensates the free holes that mediate ferromagnetism. Annealing causes out-diffusion of these interstitials, thereby increasing the Curie temperature. Here, we use cross sectional scanning tunneling microscopy and spectroscopy to visualize the potential landscape which arises due to the clustering of Mni(2+) in annealed p-i-n (GaMn)As-GaAs double barrier heterostructures. We map the local minima in the potential landscape, link them to clusters of individual Mni(2+) ions, and show that the ions are doubly charged.
在稀 p 型铁磁半导体 Ga1-xMnxAs 的生长过程中，当 x 超过 2%时，会形成间隙锰 Mni(2+)。双施主 Mni(2+)补偿了介导铁磁性的自由空穴。退火会导致这些间隙的外扩散，从而提高居里温度。在这里，我们使用横截面扫描隧道显微镜和光谱法来可视化由于退火的 p-i-n（GaMn）As-GaAs 双势垒异质结构中 Mni(2+)的聚类而产生的势能景观。我们绘制了势能景观中的局部极小值，将它们与单个 Mni(2+)离子簇联系起来，并表明离子是双电荷的。
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