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半导体中的单掺杂剂。

Single dopants in semiconductors.

机构信息

COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands.

出版信息

Nat Mater. 2011 Feb;10(2):91-100. doi: 10.1038/nmat2940.

Abstract

The sensitive dependence of a semiconductor's electronic, optical and magnetic properties on dopants has provided an extensive range of tunable phenomena to explore and apply to devices. Recently it has become possible to move past the tunable properties of an ensemble of dopants to identify the effects of a solitary dopant on commercial device performance as well as locally on the fundamental properties of a semiconductor. New applications that require the discrete character of a single dopant, such as single-spin devices in the area of quantum information or single-dopant transistors, demand a further focus on the properties of a specific dopant. This article describes the huge advances in the past decade towards observing, controllably creating and manipulating single dopants, as well as their application in novel devices which allow opening the new field of solotronics (solitary dopant optoelectronics).

摘要

半导体的电子、光学和磁学性质对掺杂剂的敏感依赖性为探索和应用于器件提供了广泛的可调谐现象。最近,人们已经能够超越掺杂剂的可调谐性质,不仅可以确定单个掺杂剂对商业器件性能的影响,还可以确定其对半导体基本性质的局部影响。需要单个掺杂剂离散特性的新应用,例如量子信息领域的单自旋器件或单掺杂晶体管,需要进一步关注特定掺杂剂的性质。本文描述了过去十年在观察、可控地创造和操纵单个掺杂剂方面取得的巨大进展,以及它们在新型器件中的应用,这为孤立电子学(单掺杂剂光电)开辟了新的领域。

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