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用于光子器件的单个硅纳米线的光学性质。

Optical properties of individual silicon nanowires for photonic devices.

机构信息

Institute of Photonic Technology Jena, 07745 Jena, Germany.

出版信息

ACS Nano. 2010 Dec 28;4(12):7113-22. doi: 10.1021/nn101076t. Epub 2010 Nov 16.

DOI:10.1021/nn101076t
PMID:21080685
Abstract

Silicon is a high refractive index material. Consequently, silicon nanowires (SiNWs) with diameters on the order of the wavelengths of visible light show strong resonant field enhancement of the incident light, so this type of nanomaterial is a good candidate for all kinds of photonic devices. Surprisingly enough, a thorough experimental and theoretical analysis of both the polarization dependence of the absorption and the scattering behavior of individual SiNWs under defined illumination has not been presented yet. Here, the present paper will contribute by showing optical properties such as scattering and absorption of individual SiNWs experimentally in an optical microscope using bright- and dark-field illumination modes as well as in analytical Mie calculations. Experimental and calculation results are in good agreement, and both reveal a strong correlation of the optical properties of individual SiNWs to their diameters. This finding supports the notion that SiNWs can be used in photonic applications such as for photovoltaics or optical sensors.

摘要

硅是一种高折射率材料。因此,直径与可见光波长相当的硅纳米线(SiNWs)会对入射光产生强烈的共振场增强,因此这种纳米材料是各种光子器件的理想候选材料。令人惊讶的是,目前还没有对单个 SiNWs 在特定照明下的吸收的偏振依赖性和散射行为进行彻底的实验和理论分析。在这里,本论文将通过在光学显微镜中使用明场和暗场照明模式以及在分析 Mie 计算中实验来展示单个 SiNWs 的散射和吸收等光学性质来做出贡献。实验和计算结果吻合得很好,两者都表明单个 SiNWs 的光学性质与其直径密切相关。这一发现支持了 SiNWs 可用于光子应用,例如用于光伏或光学传感器的观点。

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