Parent David W, Davis Janet, Basham Eric J
SJSU, USA.
Annu Int Conf IEEE Eng Med Biol Soc. 2010;2010:3507-10. doi: 10.1109/IEMBS.2010.5627801.
A process for fabricating hafnium oxide (HfO) films to minimize ionic penetration was developed and tested. A 333Å HfO film was successfully deposited by thermal evaporation. The film was characterized through capacitance versus time (C-T) and capacitance versus voltage (C-V) measurements. The films were exposed to a solution of 0.1M NaCl physiological saline and preliminary results showed that the ionic species did not alter the electrical characteristics. The relative effective dielectric constant of the hafnium oxide layer and SiO(2) interfacial layer was 10.5, while the relative dielectric constant of the hafnium oxide layer was 18.
开发并测试了一种用于制造氧化铪（HfO）薄膜以最小化离子渗透的工艺。通过热蒸发成功沉积了一层333Å的HfO薄膜。通过电容与时间（C-T）以及电容与电压（C-V）测量对该薄膜进行了表征。将这些薄膜暴露于0.1M NaCl生理盐水溶液中，初步结果表明离子种类并未改变其电学特性。氧化铪层和SiO(2)界面层的相对有效介电常数为10.5，而氧化铪层的相对介电常数为18。
