Parent David W, Basham Eric J
SJSU.
Annu Int Conf IEEE Eng Med Biol Soc. 2009;2009:5875-8. doi: 10.1109/IEMBS.2009.5334446.
A design methodology is presented that uses 1-D process simulations of Metal Insulator Semiconductor (MIS) structures to design the threshold voltage of hafnium oxide based transistors used for neural recording. The methodology is comprised of 1-D analytical equations for threshold voltage specification, and doping profiles, and 1-D MIS Technical Computer Aided Design (TCAD) to design a process to implement a specific threshold voltage, which minimized simulation time. The process was then verified with a 2-D process/electrical TCAD simulation. Hafnium oxide films (HfO) were grown and characterized for dielectric constant and fixed oxide charge for various annealing temperatures, two important design variables in threshold voltage design.
本文提出了一种设计方法，该方法利用金属绝缘体半导体（MIS）结构的一维工艺模拟来设计用于神经记录的基于氧化铪的晶体管的阈值电压。该方法由用于阈值电压规格和掺杂分布的一维解析方程，以及用于设计实现特定阈值电压的工艺的一维MIS技术计算机辅助设计（TCAD）组成，从而将模拟时间降至最低。然后通过二维工艺/电学TCAD模拟对该工艺进行验证。针对不同的退火温度生长了氧化铪薄膜（HfO），并对其介电常数和固定氧化物电荷进行了表征，退火温度是阈值电压设计中的两个重要设计变量。
