Salam Muhammad Tariqus, Sawan Mohamad, Nguyen Dang Khoa
Polystim Neurotechnologies Laboratory, École Polytechnique de Montréal, Québec, Canada.
Annu Int Conf IEEE Eng Med Biol Soc. 2010;2010:6210-3. doi: 10.1109/IEMBS.2010.5627732.
In this paper, we present the design of an epilepticseizure detector. This circuit is part of an implantable device used to continuously record intracerebral electroencephalographic signals through subdural and depth electrodes. The implemented seizure detector is based on a detection algorithm validated in Matlab tools and the circuits were implemented using CMOS 0.18-microm process. The proposed system was tested using intracerebral EEG recordings from two patients with drug-resistant epilepsy. Four seizures were assessed by the proposed CMOS building blocks and the required delays to detect these seizures were 3, 8, 11, and 11 sec, respectively after electric onset. The simulated total power consumption of the detector was 6.71 microW. Together, these preliminary results indicate the possibility of building implantable ultra-low power seizure-detection devices.
在本文中，我们展示了一种癫痫发作检测器的设计。该电路是可植入设备的一部分，用于通过硬膜下电极和深部电极连续记录脑内脑电图信号。所实现的癫痫发作检测器基于在Matlab工具中验证的检测算法，并且电路是使用CMOS 0.18微米工艺实现的。所提出的系统使用来自两名耐药性癫痫患者的脑内脑电图记录进行了测试。所提出的CMOS模块评估了四次癫痫发作，从电发作开始后检测到这些癫痫发作所需的延迟分别为3秒、8秒、11秒和11秒。检测器的模拟总功耗为6.71微瓦。这些初步结果共同表明了构建可植入超低功耗癫痫发作检测设备的可能性。
