Centre of Physics and Physics Department, University of Minho, 4710-057 Braga, Portugal.
Nanotechnology. 2010 Dec 17;21(50):505705. doi: 10.1088/0957-4484/21/50/505705. Epub 2010 Nov 22.
We report on the structural and electrical properties of Mn-doped ZnO/Al(2)O(3) nanostructures produced by the pulsed laser deposition technique. Grazing incidence small angle x-ray scattering (GISAXS) and Rutherford backscattering spectrometry revealed the multilayered structure in as-deposited samples. Annealing of the nanostructures was shown to promote the formation of nanocrystals embedded in the Al(2)O(3) matrix, as was evidenced by GISAXS and high resolution transmission microscopy. Particle-induced x-ray emission analysis showed a doping of 8 at.% Mn in ZnO. Grazing incidence x-ray diffraction and Raman spectroscopy demonstrated that the nanocrystals have the pure wurtzite ZnMnO crystalline phase. Resonant Raman scattering displayed an increase of intensity of the 1LO mode as well as broadening of the 2LO mode related to the size effect. Capacitance-voltage measurements showed carrier retention with a voltage shift higher than those reported for similar systems.
我们报告了通过脉冲激光沉积技术制备的 Mn 掺杂 ZnO/Al(2)O(3) 纳米结构的结构和电学性质。掠入射小角 X 射线散射（GISAXS）和卢瑟福背散射光谱揭示了沉积样品的多层结构。纳米结构的退火被证明促进了嵌入 Al(2)O(3) 基质中的纳米晶的形成，这一点通过 GISAXS 和高分辨率透射显微镜得到了证明。粒子诱导 X 射线发射分析表明 ZnO 中的 Mn 掺杂量为 8 at.%。掠入射 X 射线衍射和拉曼光谱表明纳米晶具有纯纤锌矿 ZnMnO 晶相。共振拉曼散射显示 1LO 模式的强度增加以及与尺寸效应相关的 2LO 模式的展宽。电容-电压测量显示出载流子保持，其电压偏移高于类似系统的报道。
