Park Kyu Ha, Li Fushan, Jung Jae Hun, Son Dong Ick, Cho Sung Whan, Kim Tae Whan
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea.
J Nanosci Nanotechnol. 2010 Jul;10(7):4801-4. doi: 10.1166/jnn.2010.1712.
Scanning electron microscopy images showed that self-assembled ZnO nanoparticles were created inside a poly-4-vinyl-phenol (PVP) layer. Current-voltage (I-V) measurements on the Al/ZnO nanoparticles embedded in a PVP layer/indium tin oxide (ITO)/glass device fabricated by using a simple spin coating method at 300 K showed an electrical hysteresis behavior, indicative of an essential feature for a bistable device. The data fitting results of the I-V curves showed that the carrier transport mechanisms at low and high voltages were attributed to the space charge limited current and the Fowler-Nordheim tunneling processes, respectively. Possible operating mechanisms for the memory effects in the Al/ZnO nanoparticles embedded in a PVP layer/ITO devices are described on the basis of the I-V results.
扫描电子显微镜图像显示，在聚4-乙烯基苯酚（PVP）层内部形成了自组装的氧化锌纳米颗粒。在300 K下，通过简单的旋涂法制备的Al/嵌入PVP层的氧化锌纳米颗粒/氧化铟锡（ITO）/玻璃器件的电流-电压（I-V）测量显示出电滞回线行为，这是双稳态器件的一个基本特征。I-V曲线的数据拟合结果表明，低电压和高电压下的载流子传输机制分别归因于空间电荷限制电流和福勒-诺德海姆隧穿过程。基于I-V结果描述了Al/嵌入PVP层的氧化锌纳米颗粒/ITO器件中记忆效应的可能运行机制。
