Lee Nam Hyun, Yun Dong Yeol, Choi Dong Hyuk, Kim Sang Wook, Kim Tae Whan
J Nanosci Nanotechnol. 2016 Jun;16(6):6271-4. doi: 10.1166/jnn.2016.12105.
X-ray photoelectron spectroscopy spectra showed that the synthesized elements of the CdSe/CdS/ ZnS QDs were Cd, Se, Zn, and S. Organic bistable devices (OBDs) containing CdSe/CdS/ZnS quantum dots (QDs) and a poly(methylmethacrylate) (PMMA) layer were fabricated on indium-tin-oxide (ITO)-deposited glass substrates. Current-voltage (I-V) curves showed that the memory margin of the Al/(CdSe/CdS/ZnS QDs) embedded in PMMA layer/ITO device at 300 K was larger than that of the device without a ZnS shell layer. The retention time of the OBDs was above 1 x 10(4) s, indicative of the stability of the device. The memory mechanisms were described by using charge trapping and tunneling processes on the basis of the energy diagram and the I-V curves.
X射线光电子能谱表明，合成的CdSe/CdS/ZnS量子点的元素为Cd、Se、Zn和S。在沉积有氧化铟锡（ITO）的玻璃基板上制备了包含CdSe/CdS/ZnS量子点（QDs）和聚甲基丙烯酸甲酯（PMMA）层的有机双稳态器件（OBDs）。电流-电压（I-V）曲线表明，在300 K时，嵌入PMMA层/ITO器件中的Al/(CdSe/CdS/ZnS QDs)的记忆裕度大于没有ZnS壳层的器件。OBDs的保持时间超过1×10(4) s，表明该器件具有稳定性。基于能量图和I-V曲线，通过电荷俘获和隧穿过程描述了记忆机制。
