Sahoo Kartika Chandra, Chang Edward Yi, Li Yiming, Lin Men-Ku, Huang Jin-Hua
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
J Nanosci Nanotechnol. 2010 Sep;10(9):5692-9. doi: 10.1166/jnn.2010.2553.
To replace the double layer antireflection coating and improve the efficiency of solar cell, a self assembled nickel nano particle mask followed by inductively coupled plasma (ICP) ion etching method is proposed to form the sub-wavelength structures (SWS) on silicon nitride (Si3N4) antireflection coating layers instead of semiconductor layer. The size and density of nickel nano particles can be controlled by the initial thickness of nickel film that is annealed to form the nano-particles on the Si3N4 film deposited on the silicon substrate. ICP etching time is responsible for controlling the height of the fabricated Si3N4 SWS on silicon substrate, which is seen from our experiment. It is found that the lowest average reflectivity of 3.12% for wavelength ranging from 350 to 1000 nm is achieved when the diameter and height of the SWS are 120-180 nm and 150-160 nm, respectively. A low reflectance below 1% is observed over the wavelength from 590 to 680 nm for the fabricated Si3N4 SWS on silicon subs. The efficiency of Si3N4 SWS could be improved by 1.31%, compared with the single layer anti-reflection (SLAR) coatings of Si3N4, using PC1D program. The results of this study may benefit the fabrication of solar cells.
为了替代双层抗反射涂层并提高太阳能电池的效率，提出了一种自组装镍纳米颗粒掩膜结合电感耦合等离子体（ICP）离子蚀刻方法，以在氮化硅（Si3N4）抗反射涂层上而非半导体层上形成亚波长结构（SWS）。镍纳米颗粒的尺寸和密度可通过镍膜的初始厚度来控制，该镍膜经退火处理后会在沉积于硅衬底上的Si3N4膜上形成纳米颗粒。从我们的实验可以看出，ICP蚀刻时间负责控制在硅衬底上制造的Si3N4 SWS的高度。研究发现，当SWS的直径和高度分别为120 - 180 nm和150 - 160 nm时，在350至1000 nm波长范围内可实现最低平均反射率3.12%。对于在硅衬底上制造的Si3N4 SWS，在590至680 nm波长范围内观察到低于1%的低反射率。使用PC1D程序，与Si3N4单层抗反射（SLAR）涂层相比，Si3N4 SWS的效率可提高1.31%。本研究结果可能有助于太阳能电池的制造。
