Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan.
Nanoscale Res Lett. 2009 Apr 22;4(7):680-3. doi: 10.1007/s11671-009-9297-7.
We have developed a simple and scalable approach for fabricating sub-wavelength structures (SWS) on silicon nitride by means of self-assembled nickel nanoparticle masks and inductively coupled plasma (ICP) ion etching. Silicon nitride SWS surfaces with diameter of 160-200 nm and a height of 140-150 nm were obtained. A low reflectivity below 1% was observed over wavelength from 590 to 680 nm. Using the measured reflectivity data in PC1D, the solar cell characteristics has been compared for single layer anti-reflection (SLAR) coatings and SWS and a 0.8% improvement in efficiency has been seen.
我们开发了一种简单且可扩展的方法，通过自组装镍纳米粒子掩模和感应耦合等离子体（ICP）离子蚀刻在氮化硅上制造亚波长结构（SWS）。获得了直径为 160-200nm 且高度为 140-150nm 的氮化硅 SWS 表面。在 590 到 680nm 的波长范围内，观察到低于 1%的低反射率。使用 PC1D 中测量的反射率数据，比较了单层抗反射（SLAR）涂层和 SWS 的太阳能电池特性，发现效率提高了 0.8%。
