采用纳米团簇掩模在氮化硅上制作用于太阳能电池的抗反射亚波长结构。

Fabrication of antireflective sub-wavelength structures on silicon nitride using nano cluster mask for solar cell application.

机构信息

Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan.

出版信息

Nanoscale Res Lett. 2009 Apr 22;4(7):680-3. doi: 10.1007/s11671-009-9297-7.

DOI:10.1007/s11671-009-9297-7

PMID:20596409

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC2893968/

Abstract

We have developed a simple and scalable approach for fabricating sub-wavelength structures (SWS) on silicon nitride by means of self-assembled nickel nanoparticle masks and inductively coupled plasma (ICP) ion etching. Silicon nitride SWS surfaces with diameter of 160-200 nm and a height of 140-150 nm were obtained. A low reflectivity below 1% was observed over wavelength from 590 to 680 nm. Using the measured reflectivity data in PC1D, the solar cell characteristics has been compared for single layer anti-reflection (SLAR) coatings and SWS and a 0.8% improvement in efficiency has been seen.

摘要

我们开发了一种简单且可扩展的方法，通过自组装镍纳米粒子掩模和感应耦合等离子体（ICP）离子蚀刻在氮化硅上制造亚波长结构（SWS）。获得了直径为 160-200nm 且高度为 140-150nm 的氮化硅 SWS 表面。在 590 到 680nm 的波长范围内，观察到低于 1%的低反射率。使用 PC1D 中测量的反射率数据，比较了单层抗反射（SLAR）涂层和 SWS 的太阳能电池特性，发现效率提高了 0.8%。