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电化学沉积氧化铱薄膜的 X 射线光谱学:通过结构无序检测多个位点。

X-ray spectroscopy of electrochemically deposited iridium oxide films: detection of multiple sites through structural disorder.

机构信息

Department of Chemistry, University of Leicester, Leicester LE1 7RH, UK.

出版信息

Phys Chem Chem Phys. 2011 Mar 28;13(12):5252-63. doi: 10.1039/c0cp01472a. Epub 2010 Dec 20.

Abstract

We report the results of X-ray absorption spectroscopy studies on electrochemically deposited iridium oxide films. The emphasis of the study is the correlation of X-ray derived structural data with electrochemically controlled charge state. Data were acquired for films subject to redox cycling in neutral and alkaline aqueous media. In both cases, cyclic voltammetric responses show two redox couples, coulometrically of roughly equal magnitude. Assays of the iridium population (based on the iridium L(3) absorption edge amplitude) and the charge injected (based on integration of the voltammetric response) show that overall an average of ca. one electron per iridium atom is transferred. The absorption edge shifts indicate that the formal charge on the iridium changes, on average, from ca. 3.5+ to ca. 4.5+ across the entire process. EXAFS-derived changes in mean Ir-O distance and their mean square variation have been interpreted in terms of a two-site model, in which the two types of site have distinct redox potentials. Variations of local structure and disorder with potential are discussed and a generic model for structural disorder (parameterized via Debye-Waller factor) with diagnostic capability is developed.

摘要

我们报告了电化学沉积氧化铱薄膜的 X 射线吸收光谱研究结果。研究的重点是 X 射线衍生结构数据与电化学控制电荷态的相关性。为在中性和碱性水溶液中经历氧化还原循环的薄膜采集了数据。在这两种情况下,循环伏安响应都显示了两个氧化还原对,其电化学计量大致相等。铱含量(基于铱 L(3)吸收边幅度)和注入电荷(基于伏安响应积分)的测定表明,平均每个铱原子转移约一个电子。吸收边的位移表明,铱的形式电荷在整个过程中平均从约 3.5+变为约 4.5+。根据双位点模型,用 EXAFS 推导的平均 Ir-O 距离及其均方变化来解释,其中两种类型的位点具有不同的氧化还原电位。讨论了局部结构和无序随电位的变化,并开发了具有诊断能力的结构无序通用模型(通过德拜-沃勒因子参数化)。

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