Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, M5S 3H6, Canada.
ACS Nano. 2011 Feb 22;5(2):1267-75. doi: 10.1021/nn102929t. Epub 2011 Jan 4.
This paper demonstrates for the first time thermally induced gradual hydrophobization, monitored quantitatively by ellipsometric porosimetry, of four prototypical periodic mesoporous organosilicas (PMOs) that are tailored through materials chemistry for use as low-dielectric-constant (low k) materials in microprocessors. Theoretical aspects of this quantification are briefly discussed. A comparison of structural, mechanical, dielectric, and hydrophobic properties of ethane, methane, ethene, and 3-ring PMOs is made. Particularly, ethane, methane, and 3-ring PMOs show impressive water repellency at post-treatment temperatures as low as 350 °C, with corresponding Young's modulus values greater than 10 GPa and k values smaller than 2, a figure of merit that satisfies the technological requirements of future generation microchips.
本文首次通过椭圆偏振法孔隙率测定，定量研究了四种经过材料化学设计的典型的周期性介孔有机硅（PMO）的热诱导逐渐疏水性，这些 PMO 被用作微处理器中的低介电常数（low k）材料。本文简要讨论了定量研究的理论方面。对乙烷、甲烷、乙烯和 3 元环 PMO 的结构、力学、介电和疏水性进行了比较。特别是，乙烷、甲烷和 3 元环 PMO 在低至 350°C 的后处理温度下表现出令人印象深刻的拒水性，相应的杨氏模量值大于 10 GPa，k 值小于 2，这一优异的数值满足了未来几代微芯片的技术要求。
