Department of Electrical Engineering, University of Delaware, Newark, Delaware 19716, USA.
Opt Lett. 2011 Jan 1;36(1):58-60. doi: 10.1364/OL.36.000058.
We demonstrate a process for the fabrication and transfer of silicon nanomembranes (Si-NMs) that have been released from their host substrates and redeposited on foreign flexible or flat substrates. The transfer process developed allows intricate photonic devices to be transferred via NMs to a variety of new substrate materials. This allows the transferred devices to benefit from the material properties of both substrate and NM. Our process is designed to transfer and stack large-area photonic devices without compromising their optical performance. The process has been used to transfer large-area unpatterned silicon NMs, in excess of 2.5 cm(2), and photonic devices with intricate device designs containing various fill factors. We have also demonstrated transferred photonic crystal devices that have maintained structural integrity and functionality.
我们展示了一种从其衬底上释放并重新沉积在外国柔性或平坦衬底上的硅纳米膜(Si-NM)的制造和转移方法。所开发的转移工艺允许通过 NM 将复杂的光子器件转移到各种新材料衬底上。这使得转移后的器件可以同时受益于衬底和 NM 的材料特性。我们的工艺旨在在不影响其光学性能的情况下转移和堆叠大面积光子器件。该工艺已用于转移大面积无图案的硅 NM,超过 2.5cm²,以及具有各种填充因子的复杂器件设计的光子器件。我们还展示了保持结构完整性和功能性的转移光子晶体器件。