La 掺杂 BiFeO3 中的畴壁电导率。

Domain wall conductivity in La-doped BiFeO3.

机构信息

Department of Physics, University of California, Berkeley, California 94720, USA.

出版信息

Phys Rev Lett. 2010 Nov 5;105(19):197603. doi: 10.1103/PhysRevLett.105.197603.

DOI:10.1103/PhysRevLett.105.197603

Abstract

The transport physics of domain wall conductivity in La-doped bismuth ferrite (BiFeO3) has been probed using variable temperature conducting atomic force microscopy and piezoresponse force microscopy in samples with arrays of domain walls in the as-grown state. Nanoscale current measurements are investigated as a function of bias and temperature and are shown to be consistent with distinct electronic properties at the domain walls leading to changes in the observed local conductivity. Our observation is well described within a band picture of the observed electronic conduction. Finally, we demonstrate an additional degree of control of the wall conductivity through chemical doping with oxygen vacancies, thus influencing the local conductive state.

摘要

使用变温导电原子力显微镜和压电力显微镜，在生长态具有畴壁阵列的样品中研究了掺镧铋铁氧体（BiFeO3）中畴壁电导率的输运物理性质。研究了纳米级电流测量作为偏压和温度的函数，并表明这与畴壁处的不同电子特性一致，导致观察到的局部电导率发生变化。我们的观察结果在观察到的电子传导的能带图中得到了很好的描述。最后，我们通过氧空位的化学掺杂证明了对壁电导率的进一步控制，从而影响了局部导电状态。