Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
J Chem Phys. 2011 Jan 14;134(2):024315. doi: 10.1063/1.3521477.
Variational transition state theory calculations with the correction of multidimensional tunneling are performed on a 12-dimensional ab initio potential energy surface for the H + SiH(4) abstraction reaction. The surface is constructed using a dual-level strategy. For the temperature range 200-1600 K, thermal rate constants are calculated and kinetic isotope effects for various isotopic species of the title reaction are investigated. The results are in very good agreement with available experimental data.
对 H + SiH(4) 抽取反应的 12 维从头算势能表面进行了变分过渡态理论计算,并修正了多维隧道效应。该表面采用双水平策略构建。在 200-1600 K 的温度范围内,计算了热速率常数,并研究了标题反应各种同位素物种的动力学同位素效应。结果与现有实验数据非常吻合。