Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, UK.
Opt Lett. 2011 Jan 15;36(2):169-71. doi: 10.1364/OL.36.000169.
We report on photoluminescence in the 1.7-2.1 μm range of silicon doped with thulium. This is achieved by the implantation of Tm into silicon that has been codoped with boron to reduce the thermal quenching. At least six strong lines can be distinguished at 80 K; at 300 K, the spectrum is dominated by the main emission at 2 μm. These emissions are attributed to the trivalent Tm(3+) internal transitions between the first excited state and the ground state.
我们报告了掺铥硅在 1.7-2.1μm 范围内的光致发光。这是通过将 Tm 离子注入到同时掺硼的硅中实现的，这样可以降低热猝灭。在 80K 时，可以分辨至少六条强谱线；在 300K 时，光谱主要由 2μm 处的主发射带主导。这些发射带归因于三价 Tm(3+)离子在第一激发态和基态之间的内部跃迁。
