硅-绝缘体中掺氧铒的 1.54μm 发射的超增强。
Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator.
机构信息
Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, E1 4NS London, UK.
Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, UK.
出版信息
Sci Rep. 2016 Nov 22;5:37501. doi: 10.1038/srep37501.
We report on the super enhancement of the 1.54 μm Er emission in erbium doped silicon-on-insulator when codoped with oxygen at a ratio of 1:1. This is attributed to a more favourable crystal field splitting in the substitutional tetrahedral site favoured for the singly coordinated case. The results on these carefully matched implant profiles show that optical response is highly determined by the amount and ratio of erbium and oxygen present in the sample and ratios of O:Er greater than unity are severely detrimental to the Er emission. The most efficient luminescence is forty times higher than in silicon-on-insulator implanted with Er only. This super enhancement now offers a realistic route not only for optical communication applications but also for the implementation of silicon photonic integrated circuits for sensing, biomedical instrumentation and quantum communication.
我们报告了在掺氧比为 1:1 的条件下，掺铒硅-绝缘体中 1.54μm Er 发射的超增强。这归因于在单配位情况下有利于取代四面体位置的更有利的晶场分裂。对这些精心匹配的注入剖面的结果表明，光学响应高度取决于样品中铒和氧的含量和比例，而 O:Er 比值大于 1 会严重损害 Er 发射。最高效的发光比仅注入 Er 的硅-绝缘体高出四十倍。这种超增强现在不仅为光通信应用，而且为传感、生物医学仪器和量子通信的硅光子集成电路的实现提供了一种现实的途径。
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