Department of Materials Science, Fudan University, Shanghai, P. R. China.
Adv Mater. 2011 Feb 1;23(5):585-98. doi: 10.1002/adma.201003624. Epub 2010 Nov 22.
Semiconductor nanostructure arrays are of great scientific and technical interest because of the strong non-linear and electro-optic effects that occur due to carrier confinement in three dimensions. The use of such nanostructure arrays with tailored geometry, array density, and length-diameter-ratio as building blocks are expected to play a crucial role in future nanoscale devices. With the unique properties of a direct wide-bandgap semiconductor, such as the presence of polar surfaces, excellent transport properties, good thermal stability, and high electronic mobility, ZnS nanostructure arrays has been a developing material star. The research on ZnS nanostructure arrays has seen remarkable progress over the last five years due to the unique properties and important potential applications of nanostructure arrays, which are summarized here. Firstly, a survey of various methods to the synthesis of ZnS nanostructure arrays will be introduced. Next recent efforts on exploiting the unique properties and applications of ZnS nanostructure arrays are discussed. Potential future directions of this research field are also highlighted.
半导体纳米结构阵列由于载流子在三维方向上的限制而产生强烈的非线性和电光效应，因此具有重要的科学和技术意义。具有特定几何形状、阵列密度和长径比的纳米结构阵列作为构建块的使用有望在未来的纳米尺度器件中发挥关键作用。由于直接宽带隙半导体的独特性质，如存在极性表面、优异的输运性质、良好的热稳定性和高电子迁移率，ZnS 纳米结构阵列已成为一种新兴的材料明星。由于纳米结构阵列的独特性质和重要的潜在应用，ZnS 纳米结构阵列的研究在过去五年中取得了显著进展，这里对此进行了总结。首先，将介绍各种合成 ZnS 纳米结构阵列的方法。接下来，讨论了最近利用 ZnS 纳米结构阵列的独特性质和应用的努力。还强调了该研究领域的潜在未来方向。
