Institut d'Electronique de Microélectronique et de Nanotechnologies (IEMN-DOAE-UMR CNRS 8520),Université de Valenciennes et du Hainaut Cambresis (UVHC), Université Lille Nord de France, F-59313 Valenciennes, France.
Ultrasonics. 2011 Jul;51(5):532-8. doi: 10.1016/j.ultras.2011.01.003. Epub 2011 Jan 8.
In this paper, we present a feasible microsystem in which the direction of localized ultrahigh frequency (∼1GHz) bulk acoustic wave can be controlled in a silicon wafer. Deep etching technology on the silicon wafer makes it possible to achieve high aspect ratio etching patterns which can be used to control bulk acoustic wave to transmit in the directions parallel to the surface of the silicon wafer. Passive 45° mirror planes obtained by wet chemical etching were employed to reflect the bulk acoustic wave. Zinc oxide (ZnO) thin film transducers were deposited by radio frequency sputtering with a thickness of about 1μm on the other side of the wafer, which act as emitter/receptor after aligned with the mirrors. Two opponent vertical mirrors were inserted between the 45° mirrors to guide the transmission of the acoustic waves. The propagation of the bulk acoustic wave was studied with simulations and the characterization of S(21) scattering parameters, indicating that the mirrors were efficient to guide bulk acoustic waves in the silicon wafer.
在本文中，我们提出了一种可行的微系统，能够在硅片上控制局域超高频率（约 1GHz）体声波的方向。硅片上的深蚀刻技术使得能够实现高纵横比的蚀刻图案，这些图案可用于控制体声波沿平行于硅片表面的方向传输。通过湿法化学蚀刻获得的无源 45°反射镜平面用于反射体声波。氧化锌（ZnO）薄膜换能器通过射频溅射沉积在晶圆的另一侧，厚度约为 1μm，经过与反射镜对准后，可作为发射器/接收器。在 45°反射镜之间插入两个相对的垂直反射镜，以引导声波的传输。通过模拟和 S(21)散射参数的特性化研究了体声波的传播，表明反射镜能够有效地在硅片中引导体声波。
