Department of Mechanical Engineering, Stanford University, California 94305, United States.
Nano Lett. 2011 Mar 9;11(3):1300-5. doi: 10.1021/nl104362e. Epub 2011 Feb 15.
Vertical transfer of silicon nanowire (SiNW) arrays with uniform length onto adhesive substrates was realized by the assistance of creating a horizontal crack throughout SiNWs. The crack is formed by adding a water soaking step between consecutive Ag-assisted electroless etching processes of Si. The crack formation is related to the delamination, redistribution, and reattachment of the Ag film during the water soaking and subsequent wet etching steps. Moreover, the crack facilitates embedding SiNWs inside polymers.
通过在连续的 Si 各向异性湿法刻蚀工艺之间增加一个水浸泡步骤，实现了在粘性衬底上垂直转移具有均匀长度的硅纳米线（SiNW）阵列。该裂缝的形成与水浸泡和随后的湿刻蚀过程中 Ag 膜的分层、再分布和再附着有关。此外，该裂缝有助于将 SiNW 嵌入聚合物中。
