Department of Chemistry, McMaster University, Hamilton, Ontario L8S 4M1, Canada.
J Am Chem Soc. 2011 Apr 27;133(16):6265-9. doi: 10.1021/ja110618g. Epub 2011 Feb 22.
The missing Xe(IV) oxide, XeO(2), has been synthesized at 0 °C by hydrolysis of XeF(4) in water and 2.00 M H(2)SO(4(aq)). Raman spectroscopy and (16/18)O isotopic enrichment studies indicate that XeO(2) possesses an extended structure in which Xe(IV) is oxygen bridged to four neighboring oxygen atoms to give a local square-planar XeO(4) geometry based on an AX(4)E(2) valence shell electron pair repulsion (VSEPR) arrangement. The vibrational spectra of Xe(16)O(2) and Xe(18)O(2) amend prior vibrational assignments of xenon doped SiO(2) and are in accordance with prior speculation that xenon depletion from the Earth's atmosphere may occur by xenon insertion at high temperatures and high pressures into SiO(2) in the Earth's crust.
缺失的 Xe(IV)氧化物 XeO(2)，通过四氟化氙在水和 2.00 M H(2)SO(4(aq))中的水解反应，在 0°C 下合成。拉曼光谱和 (16/18)O 同位素富集研究表明，XeO(2)具有伸展结构，其中 Xe(IV)通过氧桥连接到四个相邻的氧原子，以给出基于 AX(4)E(2)价壳电子对排斥 (VSEPR)排列的局部正方形平面 XeO(4)几何形状。Xe(16)O(2)和 Xe(18)O(2)的振动光谱修正了先前掺杂二氧化硅中氙的振动分配，并符合先前的推测，即地球大气中的氙气可能通过在高温高压下插入地壳中的二氧化硅而耗尽。
