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门控和压力对交叉纳米管结电子输运性质的影响:肖特基势垒的形成。

Effect of gating and pressure on the electronic transport properties of crossed nanotube junctions: formation of a Schottky barrier.

机构信息

Department of Applied Physics, Aalto University, Aalto, Finland.

出版信息

J Phys Condens Matter. 2011 Mar 23;23(11):112203. doi: 10.1088/0953-8984/23/11/112203. Epub 2011 Mar 1.

Abstract

The electronic transport properties of crossed carbon nanotube junctions are investigated using ab initio methods. The optimal atomic structures and the intertube distances of the junctions are obtained using van der Waals corrected density functional theory. The effect of gating on the intertube conductance of the junctions is explored, showing the charge accumulation to the nanotube contact and the charge depletion region at the metal-semiconductor Schottky contact. Finally, it is shown how the conductance of the junctions under the gate voltage is affected by pressure applied to the nanotube film.

摘要

采用从头算方法研究了交叉碳纳米管结的电子输运性质。利用范德华修正密度泛函理论得到了结的最佳原子结构和管间距离。探讨了栅极对结间电导的影响,结果表明栅极会导致纳米管接触处电荷积累和金属-半导体肖特基接触处电荷耗尽区。最后,展示了施加在纳米管薄膜上的压力如何影响栅压下结的电导。

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