Squires Matthew B, Stickney James A, Carlson Evan J, Baker Paul M, Buchwald Walter R, Wentzell Sandra, Miller Steven M
Air Force Research Laboratory, Hanscom AFB, Massachusetts 01731, USA.
Rev Sci Instrum. 2011 Feb;82(2):023101. doi: 10.1063/1.3529434.
We present the use of direct bonded copper (DBC) for the straightforward fabrication of high power atom chips. Atom chips using DBC have several benefits: excellent copper/substrate adhesion, high purity, thick (>100 μm) copper layers, high substrate thermal conductivity, high aspect ratio wires, the potential for rapid (<8 h) fabrication, and three-dimensional atom chip structures. Two mask options for DBC atom chip fabrication are presented, as well as two methods for etching wire patterns into the copper layer. A test chip, able to support 100 A of current for 2 s without failing, is used to determine the thermal impedance of the DBC. An assembly using two DBC atom chips is used to magnetically trap laser cooled (87)Rb atoms. The wire aspect ratio that optimizes the magnetic field gradient as a function of power dissipation is determined to be 0.84:1 (height:width).
