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具有非晶硅表面光栅的GaInAsP/InP横向电流注入分布反馈激光器

GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating.

作者信息

Shindo Takahiko, Okumura Tadashi, Ito Hitomi, Koguchi Takayuki, Takahashi Daisuke, Atsumi Yuki, Kang Joonhyun, Osabe Ryo, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa

机构信息

Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan.

出版信息

Opt Express. 2011 Jan 31;19(3):1884-91. doi: 10.1364/OE.19.001884.

DOI:10.1364/OE.19.001884
PMID:21369003
Abstract

We fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-μm stripe width and 300-μm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.

摘要

我们制造了一种新型的横向电流注入型分布反馈(DFB)激光器,其具有非晶硅(a-Si)表面光栅,这是实现薄膜激光器的一步。该激光器由生长在半绝缘InP衬底上的薄GaInAsP核心层和用于DFB光栅的30纳米厚a-Si表面层组成。在室温连续波条件下,对于2.0微米的条宽和300微米的腔长,从前表面获得了7.0毫安的低阈值电流和43%的高效率。在30毫安的偏置电流下获得了4.8吉赫兹的小信号调制带宽。

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