在硅衬底上单片生长的具有低阈值电流密度的连续波砷化铟/砷化镓量子点激光二极管。

Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.

作者信息

Lee Andrew, Jiang Qi, Tang Mingchu, Seeds Alwyn, Liu Huiyun

机构信息

Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK.

出版信息

Opt Express. 2012 Sep 24;20(20):22181-7. doi: 10.1364/OE.20.022181.

DOI:10.1364/OE.20.022181

PMID:23037366

Abstract

We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold current densities of 163 A/cm(2) and 64.3 A/cm(2) under continuous-wave and pulsed conditions for ridge-waveguide lasers with as cleaved facets, respectively. The value of 64.3 A/cm(2) represents the lowest room-temperature threshold current density for any kind of laser on Si to date.

摘要

我们报道了在硅衬底上单片生长的III-V族量子点激光二极管的首次室温连续波工作。在硅基锗衬底上制备了长波长InAs/GaAs量子点结构。对于具有解理面的脊形波导激光器，在连续波和脉冲条件下，分别实现了波长为1.28μm的室温激射，阈值电流密度分别为163A/cm²和64.3A/cm²。64.3A/cm²的值代表了迄今为止硅基上任何类型激光器的最低室温阈值电流密度。