Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Neuchâtel, Switzerland.
J Phys Condens Matter. 2011 Apr 6;23(13):135003. doi: 10.1088/0953-8984/23/13/135003. Epub 2011 Mar 14.
Using angle-resolved photoelectron spectroscopy we investigate the electronic valence band structure of the Si(331)-(12 × 1) surface reconstruction for which we recently proposed a structural model containing silicon pentamers as elementary structural building blocks. We find that this surface, reported to be metallic in a previous study, shows a clear band gap at the Fermi energy, indicating semiconducting behavior. An occupied surface state, presumably containing several spectral components, is found centered at - 0.6 eV exhibiting a flat energy dispersion. These results are confirmed by scanning tunneling spectroscopy and are consistent with recent first-principles calculations for our structural model.
我们使用角分辨光电子能谱研究了 Si(331)-(12×1)表面重构的价带电子结构,我们最近提出的一个结构模型包含硅五聚体作为基本结构单元。我们发现,这个表面在前一个研究中被报道为金属性的,在费米能级处显示出明显的带隙,表明其具有半导体行为。一个占据的表面态,大概包含几个谱分量,被发现位于-0.6 eV 处,具有平坦的能谱色散。这些结果通过扫描隧道谱得到了证实,并且与我们的结构模型的最近的第一性原理计算一致。