Zaknoon Bashir, Bahir Gad, Saguy Cecile, Edrei Rachel, Hoffman Alon, Rao Rajesh A, Muralidhar Ramachandran, Chang Ko-Min
Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa, Israel.
Nano Lett. 2008 Jun;8(6):1689-94. doi: 10.1021/nl080625b. Epub 2008 May 17.
Scanning tunneling spectroscopy in the shell-filling regime was carried out at room temperature to investigate the size dependence of the band gap and single-electron charging energy of single Si quantum dots (QDs). The results are compared with model calculation. A 12-fold multiple staircase structure was observed for a QD of about 4.3 nm diameter, reflecting the degeneracy of the first energy level, as expected from theoretical calculations. The systematic broadening of the tunneling spectroscopy peaks with decreasing dot diameter is attributed to the reduced barrier height for smaller dot sizes and to the splitting of the first energy level.
在室温下对壳层填充区域进行扫描隧道谱测量，以研究单个硅量子点（QD）的带隙和单电子充电能量的尺寸依赖性。将结果与模型计算进行比较。对于直径约为4.3 nm的量子点，观察到了12重多重阶梯结构，这反映了第一能级的简并性，正如理论计算所预期的那样。随着量子点直径减小，隧道谱峰的系统展宽归因于较小尺寸量子点的势垒高度降低以及第一能级的分裂。
