Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität, Altenbergerstrasse 69, A-4040 Linz, Austria.
J Phys Condens Matter. 2011 Feb 2;23(4):042001. doi: 10.1088/0953-8984/23/4/042001. Epub 2010 Dec 15.
Interdiffusion during growth of Fe on As-rich GaAs(001) substrates has been investigated by real time stress measurements. Compared to Ga-rich GaAs(001), interdiffusion processes are decisively reduced. The optimum growth temperature (characterized by abrupt interfaces, pseudomorphic growth and negligible intermixing) is found to lie below 50 °C. At higher growth temperatures interdiffusion effects increase and eventually lead to the formation of a compact crystalline alloy layer of presumably Fe(2 + x)Ga(1 - x), as evidenced by transmission electron microscopy and x-ray diffraction.
通过实时应⼒测量研究了富砷 GaAs(001)衬底上 Fe 生长过程中的互扩散。与富 Ga 的 GaAs(001)相比，互扩散过程明显减少。发现最佳生长温度（表现为突然的界面、伪晶生长和可忽略的混合）低于 50°C。在较高的生长温度下，互扩散效应增加，最终导致形成一个可能为 Fe(2 + x)Ga(1 - x)的致密结晶合金层，这一点通过透射电镜和 X 射线衍射得到了证实。
