通过分子束外延生长的CuGaSe/CuInSe双异质结界面的研究。
Investigation of CuGaSe/CuInSe double heterojunction interfaces grown by molecular beam epitaxy.
作者信息
Thiru Sathiabama, Asakawa Masaki, Honda Kazuki, Kawaharazuka Atsushi, Tackeuchi Atsushi, Makimoto Toshiki, Horikoshi Yoshiji
机构信息
School of Advanced Science and Engineering, Waseda University , 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN.
CREST, JST , 4-1-8, Honcho Kawaguchi, Saitama, 332-0012, JAPAN.
出版信息
AIP Adv. 2015 Feb 11;5(2):027120. doi: 10.1063/1.4908229. eCollection 2015 Feb.
In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe/CnInSe/CuGaSe grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.
利用迁移增强外延技术，对在砷化镓（001）上生长的CuGaSe/CnInSe/CuGaSe异质结界面进行了原位反射高能电子衍射（RHEED）观察和X射线衍射测量。观察到由迁移增强外延序列交替沉积引起的条纹状RHEED图案和持续的RHEED强度振荡，并证实了光滑表面的生长。RHEED观察结果还证实了异质界面处组成材料的相互扩散。当衬底温度低至400°C时，横截面透射电子显微镜显示出平坦且陡峭的异质界面。这些甚至通过X射线衍射和光致发光测量得到了证实。
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