Thiru Sathiabama, Asakawa Masaki, Honda Kazuki, Kawaharazuka Atsushi, Tackeuchi Atsushi, Makimoto Toshiki, Horikoshi Yoshiji
School of Advanced Science and Engineering, Waseda University , 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN.
CREST, JST , 4-1-8, Honcho Kawaguchi, Saitama, 332-0012, JAPAN.
AIP Adv. 2015 Feb 11;5(2):027120. doi: 10.1063/1.4908229. eCollection 2015 Feb.
In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe/CnInSe/CuGaSe grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.
利用迁移增强外延技术，对在砷化镓（001）上生长的CuGaSe/CnInSe/CuGaSe异质结界面进行了原位反射高能电子衍射（RHEED）观察和X射线衍射测量。观察到由迁移增强外延序列交替沉积引起的条纹状RHEED图案和持续的RHEED强度振荡，并证实了光滑表面的生长。RHEED观察结果还证实了异质界面处组成材料的相互扩散。当衬底温度低至400°C时，横截面透射电子显微镜显示出平坦且陡峭的异质界面。这些甚至通过X射线衍射和光致发光测量得到了证实。
