L V Kirensky Institute of Physics, Siberian Branch of Russian Academy of Sciences, 660036 Krasnoyarsk, Russia.
J Phys Condens Matter. 2011 Feb 2;23(4):045701. doi: 10.1088/0953-8984/23/4/045701. Epub 2011 Jan 12.
Several experimental and theoretical studies indicate the existence of a critical point separating the underdoped and overdoped regions of the high-T(c) cuprates' phase diagram. There are at least two distinct proposals on the critical concentration and its physical origin. The first one is associated with the pseudogap formation for p < p, with p≈0.2. The other relies on the Hall effect measurements and suggests that the critical point and the quantum phase transition (QPT) take place at optimal doping, p(opt)≈0.16. Here we have performed a precise density of states calculation and found that there are two QPTs and the corresponding critical concentrations associated with the change of the Fermi surface topology upon doping.
几项实验和理论研究表明，高温超导 cuprates 相图的欠掺杂和过掺杂区域之间存在一个临界点。对于临界浓度及其物理起源，至少有两种不同的提议。第一种与 p < p 时的赝能隙形成有关，其中 p≈0.2。另一种则依赖于 Hall 效应测量，并表明临界点和量子相变（QPT）发生在最佳掺杂，p(opt)≈0.16。在这里，我们进行了精确的态密度计算，发现存在两个 QPT 和对应的临界浓度，它们与掺杂时费米面拓扑结构的变化有关。
