Lee Dong Uk, Kim Seon Pil, Han Dong Seok, Kim Eun Kyu, Park Goon-Ho, Cho Won-Ju, Kim Young-Ho
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea.
J Nanosci Nanotechnol. 2011 Jan;11(1):437-40. doi: 10.1166/jnn.2011.3164.
In2O3 nanocrystal memories with barrier-engineered tunnel layers were fabricated on a p-type Si substrate. The structure and thickness of the barrier-engineered tunnel layers were SiO2/Si3N4/SiO2 (ONO) and 2/2/3 nm, respectively. The equivalent oxide thickness of the ONO tunnel layers was 5.64 nm. The average size and density of the In2O3 nanocrystals after the reaction between BPDA-PDA polyimide and the In thin film were about 8 nm and 4 x 10(11) cm(-2), respectively. The electrons were charged from the channel of the memory device to the quantum well of the In2O3 nanocrystal through the ONO tunnel layer via Fowler-Nordheim tunneling. The memory window was about 1.4 V when the program and erase conditions of the In2O3 nanocrystal memory device were 12 V for 1 s and -15 V for 200 ms.
在p型硅衬底上制备了具有势垒工程隧道层的In2O3纳米晶体存储器。势垒工程隧道层的结构和厚度分别为SiO2/Si3N4/SiO2（ONO）和2/2/3纳米。ONO隧道层的等效氧化层厚度为5.64纳米。BPDA-PDA聚酰亚胺与In薄膜反应后，In2O3纳米晶体的平均尺寸和密度分别约为8纳米和4×10(11) cm(-2)。电子通过Fowler-Nordheim隧穿，经由ONO隧道层从存储器件的沟道充电至In2O3纳米晶体的量子阱。当In2O3纳米晶体存储器件的编程和擦除条件分别为12 V持续1 s和-15 V持续200 ms时，存储窗口约为1.4 V。
