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用于正性和负性光刻胶中各种三维纳米/微结构制造的先进光刻模拟。

Advanced lithography simulation for various 3-dimensional nano/microstructuring fabrications in positive- and negative-tone photoresists.

作者信息

Kim Sang-Kon, Oh Hye-Keun, Jung Young-Dae, An Ilsin

机构信息

Department of Applied Physics, Hanyang University, Ansan 426-791, Korea.

出版信息

J Nanosci Nanotechnol. 2011 Jan;11(1):528-32. doi: 10.1166/jnn.2011.3288.

DOI:10.1166/jnn.2011.3288
PMID:21446490
Abstract

Photoresist lithography has been applied to the fabrication of micro/nano devices, such as microfluidic structures, quantum dots, and photonic devices, in MEMS (micro-electro mechanical systems) and NEMS (nano-electro-mechanical systems). In particular, nano devices can be expected to present different physical phenomena due to their three-dimensional (3D) structure. The flexible 3D micro/nano fabrication technique and its process simulation have become among the major topics needed to understand nano-mechanical phenomena. For this purpose, the moving-mask technology and the lithography processes for the positive- and negative-tone photoresists were modeled. The validity of the simulation of the proposed 3D nano/microstructuring was successfully confirmed by comparing the experiment results and the simulated results. Hence, the developed model and the simulation can present and optimize photoresist characteristics and lithography process conditions due to the various 3D nano/microstructures. They could be help in the understanding of nanomaterial and mechanical phenomena.

摘要

光刻技术已应用于微机电系统(MEMS)和纳机电系统(NEMS)中微纳器件的制造,如微流体结构、量子点和光子器件。特别是,纳米器件由于其三维(3D)结构有望呈现出不同的物理现象。灵活的3D微纳制造技术及其工艺模拟已成为理解纳米机械现象所需的主要课题之一。为此,对移动掩膜技术以及正性和负性光刻胶的光刻工艺进行了建模。通过比较实验结果和模拟结果,成功证实了所提出的3D纳米/微结构模拟的有效性。因此,所开发的模型和模拟能够呈现并优化由于各种3D纳米/微结构而产生的光刻胶特性和光刻工艺条件。它们有助于理解纳米材料和机械现象。

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