Cheng E, Tang Suzhou, Li Chen, Zou Helin, Wei Qiang
School of Mechanical Engineering, Hebei University of Technology, Tianjin 300401, China.
College of Packaging and Printing Engineering, Tianjin University of Science and Technology, Tianjin 300222, China.
J Nanosci Nanotechnol. 2020 Apr 1;20(4):2508-2513. doi: 10.1166/jnn.2020.17208.
Nanofluidics devices with two-dimensional nano-structures have attracted extensive interests for biological and chemical applications. The fabrication of nanoscale mask patterns with controllable line width is an indispensable process for manufacturing two-dimensional nano-structures. However, a simple and low-cost method for fabricating two-dimensional nano-patterns is still a challenge. In this work, a novel simple and low-cost method for fabricating nanoscale mask patterns with controllable line width, based on the ultraviolet exposure is presented. In the experiment, a layer of AZ5214 reversal photoresist was exposed to the ultraviolet light through the photomask with microscale patterns. After the lithography, nanoscale photoresist mesas patterns instead of microscale patterns were produced. The photoresist mesas with 400~800 nm width were fabricated. Meanwhile, by adjusting the parameters of exposure time, various nanoscale dimensions of photoresist mesas can be obtained. The proposed method overcomes limitations of the conventional ultraviolet lithography technology without the need to the expensive nanolithography equipment. Our novel fabrication method should be a useful tool for two-dimensional nano-structures fabrication due to its advantages of simple fabrication process, well controllability, and low-cost.
具有二维纳米结构的纳米流体器件在生物和化学应用方面引起了广泛关注。制造具有可控线宽的纳米级掩膜图案是制造二维纳米结构不可或缺的过程。然而，一种简单且低成本的制造二维纳米图案的方法仍然是一个挑战。在这项工作中，提出了一种基于紫外线曝光的新颖、简单且低成本的制造具有可控线宽的纳米级掩膜图案的方法。在实验中，一层AZ5214正性光刻胶通过具有微米级图案的光掩膜暴露于紫外线下。光刻后，产生的是纳米级光刻胶台面图案而非微米级图案。制造出了宽度为400~800nm的光刻胶台面。同时，通过调整曝光时间参数，可以获得各种纳米级尺寸的光刻胶台面。所提出的方法克服了传统紫外线光刻技术的局限性，无需昂贵的纳米光刻设备。我们新颖的制造方法因其制造过程简单、可控性好且成本低的优点，应成为二维纳米结构制造的有用工具。
