Nara Institute of Science and Technology, 8916-5, Takayama, Ikoma, Nara 630-0192, Japan.
Nanotechnology. 2011 May 27;22(21):215201. doi: 10.1088/0957-4484/22/21/215201. Epub 2011 Mar 31.
This study reports controlled single conductive paths found in resistive random access memory (ReRAM) formed by embedding Pt nanoparticles (Pt NPs) in NiO film. Homogeneous Pt NPs produced and placed by ferritin protein produce electric field convergence which leads to controlled conductive path formation. The ReRAM with Pt NPs shows stable switching behavior. A Pt NP density decrease results in an increase of OFF state resistance and decrease of forming voltage, whereas ON resistance was independent of the Pt NP density, which indicates that a single metal NP in a memory cell will achieve low power and stable operation.
本研究报告了在由嵌入 NiO 薄膜中的 Pt 纳米粒子 (Pt NPs) 形成的电阻式随机存取存储器 (ReRAM) 中发现的受控单导电通路。由铁蛋白蛋白产生和放置的均匀 Pt NPs 产生电场汇聚，从而导致受控导电通路的形成。具有 Pt NPs 的 ReRAM 表现出稳定的开关行为。Pt NPs 密度的降低导致关态电阻增加和形成电压降低，而导通电阻与 Pt NPs 密度无关，这表明在存储单元中的单个金属 NP 将实现低功耗和稳定的操作。
