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缺陷工程石墨烯纳米带中的热和电子输运控制。

Control of thermal and electronic transport in defect-engineered graphene nanoribbons.

机构信息

Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, Texas 77845-3122, United States.

出版信息

ACS Nano. 2011 May 24;5(5):3779-87. doi: 10.1021/nn200114p. Epub 2011 Apr 19.

Abstract

The influence of the structural detail and defects on the thermal and electronic transport properties of graphene nanoribbons (GNRs) is explored by molecular dynamics and non-equilibrium Green's function methods. A variety of randomly oriented and distributed defects, single and double vacancies, Stone-Wales defects, as well as two types of edge form (armchair and zigzag) and different edge roughnesses are studied for model systems similar in sizes to experiments (>100 nm long and >15 nm wide). We observe substantial reduction in thermal conductivity due to all forms of defects, whereas electrical conductance reveals a peculiar defect-type-dependent response. We find that a 0.1% single vacancy concentration and a 0.23% double vacancy or Stone-Wales concentration lead to a drastic reduction in thermal conductivity of GNRs, namely, an 80% reduction from the pristine one of the same width. Edge roughness with an rms value of 7.28 Å leads to a similar reduction in thermal conductivity. Randomly distributed bulk vacancies are also found to strongly suppress the ballistic nature of electrons and reduce the conductance by 2 orders of magnitude. However, we have identified that defects close to the edges and relatively small values of edge roughness preserve the quasi-ballistic nature of electronic transport. This presents a route of independently controlling electrical and thermal transport by judicious engineering of the defect distribution; we discuss the implications of this for thermoelectric performance.

摘要

通过分子动力学和非平衡格林函数方法研究了结构细节和缺陷对石墨烯纳米带(GNRs)热和电子输运性质的影响。研究了各种随机取向和分布的缺陷、单空位和双空位、Stone-Wales 缺陷,以及两种边缘形式(扶手椅和锯齿形)和不同的边缘粗糙度,这些模型系统的尺寸与实验相似(>100nm 长和>15nm 宽)。我们观察到由于所有形式的缺陷,热导率都有大幅度降低,而电导率则呈现出一种特殊的缺陷类型依赖性响应。我们发现,0.1%的单空位浓度和 0.23%的双空位或 Stone-Wales 浓度会导致 GNRs 的热导率急剧下降,即在相同宽度的原始 GNRs 的基础上下降了 80%。均方根值为 7.28Å 的随机分布体空位也会导致热导率的类似降低。我们还发现,随机分布的体空位强烈抑制了电子的弹道性质,使电导降低了 2 个数量级。然而,我们已经确定,靠近边缘的缺陷和较小的边缘粗糙度值可以保持电子输运的准弹道性质。这为通过明智地设计缺陷分布来独立控制电输运和热输运提供了一种途径;我们讨论了这对热电器件性能的影响。

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