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低温下高功率脉冲磁控溅射法在铀上沉积的氮化钛薄膜

TiN Films Deposited on Uranium by High Power Pulsed Magnetron Sputtering under Low Temperature.

作者信息

Ding Jingjing, Yin Xixi, Fang Liping, Meng Xiandong, Yin Anyi

机构信息

Institute of Material, China Academy of Engineering Physics, Mianyang 621900, China.

出版信息

Materials (Basel). 2018 Aug 10;11(8):1400. doi: 10.3390/ma11081400.

Abstract

Depleted uranium (DU) is oxidized readily due to its chemical activities, which limits its applications in nuclear industry. TiN film has been applied widely due to its good mechanical properties and its excellent corrosion resistance. In this work, TiN protection films were deposited on DU by direct current magnetron sputtering (DCMS) and high power pulsed magnetron sputtering (HPPMS), respectively. The surface morphology and microstructures were investigated by atomic force microscope (AFM), scanning electron microscopy (SEM), and grazing incidence X-ray diffraction (GIXRD). The hardness and Young's modulus were determined by nano-Indenter. The wear behavior and adhesion was analyzed by pin-on-disc tests and scratch adhesion tests and the corrosion resistance was evaluated by electrochemical measurements. The results show that the TiN films that were deposited by HPPMS outperformed TiN film deposited by DCMS, with improvements on surface roughness, mechanical properties, wear behavior, adhesion strength, and corrosion resistance, thanks to its much denser columnar grain growth structure and preferred orientation of (111) plane with the lowest strain energy. Besides, the process of Ti interlayer deposition by HPPMS can enhance the film properties to an extent as compared to DCMS, which is attributed to the enhanced ion bombardment during the HPPMS.

摘要

贫铀(DU)因其化学活性而易于氧化,这限制了其在核工业中的应用。氮化钛(TiN)薄膜因其良好的机械性能和优异的耐腐蚀性而得到广泛应用。在本工作中,分别通过直流磁控溅射(DCMS)和高功率脉冲磁控溅射(HPPMS)在贫铀上沉积TiN保护膜。通过原子力显微镜(AFM)、扫描电子显微镜(SEM)和掠入射X射线衍射(GIXRD)研究了表面形貌和微观结构。通过纳米压痕仪测定硬度和杨氏模量。通过销盘试验和划痕附着力试验分析磨损行为和附着力,并通过电化学测量评估耐腐蚀性。结果表明,与通过DCMS沉积的TiN薄膜相比,通过HPPMS沉积的TiN薄膜在表面粗糙度、机械性能、磨损行为、附着力强度和耐腐蚀性方面表现更优,这得益于其更致密的柱状晶粒生长结构和具有最低应变能的(111)面择优取向。此外,与DCMS相比,通过HPPMS沉积Ti中间层的过程可以在一定程度上提高薄膜性能,这归因于HPPMS过程中增强的离子轰击。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e66/6119904/03091c0400e4/materials-11-01400-g001a.jpg

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