Zomorrodian A, Wu N J, Song Y, Stahl S, Ignatiev A, Trexler E Brady, Garcia C A
Texas Center for Superconductivity and Advanced Materials, University of Houston, Houston, TX 77204-5004, U.S.A.
Jpn J Appl Phys Pt 1. 2005 Sep;44(2005):6105-6108. doi: 10.1143/JJAP.44.6105.
The anomalous photovoltaic effect (APE) in ferroelectric thin films has been utilized for the development of an optical micro-detector active in the visible range (from 350 to 800 nm). La-doped Pb(Zr,Ti)O(3) (PLZT) ferroelectric films epitaxially grown on Pt(001)/Mg(001) substrate were fabricated into micro-detector arrays and characterized as to their optical response. The Au/PLZT/Pt/MgO device was self-polarized in the as-deposited form with the polarization vector perpendicular to film surface. The heterostructure photovoltage response ranged from 100 to 200 mV, and the photocurrent was ~30 nA/cm(2) for devices of ~250 μm diameter under illumination of 100 mW/cm(2) at wavelengths from 400 to 580 nm. Such micro-detectors can be used for optical sensors in MEMS devices as well as for electrical stimulators of biological cells.
铁电薄膜中的反常光伏效应（APE）已被用于开发在可见光范围（350至800纳米）内工作的光学微探测器。在Pt(001)/Mg(001)衬底上外延生长的La掺杂Pb(Zr,Ti)O(3)（PLZT）铁电薄膜被制成微探测器阵列，并对其光学响应进行了表征。Au/PLZT/Pt/MgO器件在沉积态时自发极化，极化矢量垂直于薄膜表面。对于直径约250μm的器件，在波长为400至580nm、光照强度为100mW/cm(2)的条件下，异质结构光电压响应范围为100至200mV，光电流约为30nA/cm(2)。这种微探测器可用于MEMS器件中的光学传感器以及生物细胞的电刺激器。
