基于镧掺杂铋铁氧体薄膜的高性能铁电非易失性存储器。
High-performance ferroelectric non-volatile memory based on La-doped BiFeO thin films.
作者信息
Dai Wanqiong, Li Yuanxiang, Jia Caihong, Kang Chaoyang, Li Mengxin, Zhang Weifeng
机构信息
Henan Key Laboratory of Photovoltaic Materials and Center for Topological functional materials, Henan University Kaifeng 475004 China
出版信息
RSC Adv. 2020 May 11;10(31):18039-18043. doi: 10.1039/d0ra02780d. eCollection 2020 May 10.
An ultrathin (6.2 nm) ferroelectric LaBiFeO (LBFO) film was epitaxially grown on a 0.7 wt% Nb-doped SrTiO (001) single-crystal substrate by carrying out pulsed laser deposition to form a Pt/LaBiFeO/Nb-doped SrTiO heterostructure. The LBFO film exhibited strong ferroelectricity and a low coercive field. By optimizing the thickness of the LBFO film, a resistance OFF/ON ratio of the Pt/LBFO (∼6.2 nm)/NSTO heterostructure of as large as 2.8 × 10 was achieved. The heterostructure displayed multi-level storage and excellent retention characteristics, and showed stable bipolar resistance switching behavior, which can be well applied to ferroelectric memristors. The resistance switching behavior was shown to be due to the modulating effect of the ferroelectric polarization reversal on the width of the depletion region and the height of the potential barrier of the LaBiFeO/Nb-doped SrTiO interface.
通过脉冲激光沉积在0.7 wt% Nb掺杂的SrTiO₃(001) 单晶衬底上外延生长了一种超薄（6.2纳米）铁电LaBiFeO₃（LBFO）薄膜，以形成Pt/LaBiFeO₃/Nb掺杂的SrTiO₃异质结构。LBFO薄膜表现出强铁电性和低矫顽场。通过优化LBFO薄膜的厚度，Pt/LBFO（~6.2纳米）/NSTO异质结构的电阻开/关比高达2.8×10³。该异质结构表现出多级存储和优异的保持特性，并显示出稳定的双极电阻开关行为，可很好地应用于铁电忆阻器。电阻开关行为被证明是由于铁电极化反转对LaBiFeO₃/Nb掺杂的SrTiO₃界面耗尽区宽度和势垒高度的调制作用。
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